N-Channel Enhancement Mode MOSFET
PPJC7410
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V Current 500mA
Features
Low Voltage Drive (1.2V). Ad...
Description
PPJC7410
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V Current 500mA
Features
Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00018 ounces, 0.005 grams Marking: C10
SOT-323
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 20 +10 500
1000 350 2.8 -55~150
357
UNITS V V mA mA
mW mW/ oC
oC
oC/W
March 5,2015-REV.00
Page 1
PPJC7410
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Dio...
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