PJX138L

PPJX138L 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 160mA Features  RDS(ON) , VGS@10V, ID@160mA<4.2Ω  RDS(ON) , [email protected], ID@100mA<5Ω  RDS(ON) , [email protected], ID@50mA<7Ω  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-563 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00009 ounces, 0.0026 grams  Marking: X8L SOT-563 Unit : inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 60 +20 160 800 223 1.8 -55~150 560 UNITS V V mA mA mW mW/ oC oC oC/W March 27,2015-REV.01 ` Page 1 PPJX138L Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Tim...