PJQ1902

PPJQ1902 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 500mA DFN3L Features  RDS(ON) , VGS@4.5V, ID@350mA<1.2Ω  RDS(ON) , VGS@2.5V, ID@200mA<1.6Ω  RDS(ON) , VGS@1.8V, ID@80mA<2.3Ω  RDS(ON) , VGS@1.5V, ID@10mA<2.5Ω(typ.)  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN3L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00004 ounces, 0.0011 grams  Marking: 2 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 30 +10 500 1500 700 5.6 -55~150 175 UNITS V V mA mA mW mW/ oC oC oC/W September 30,2015-REV.00 Page 1 PPJQ1902 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capaci...