PJT7600

PPJT7600 20V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 20 / -20V Current 1 / -0.7A SOT-363 Features Application  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in comply with EU RoHS 2011/65/EU directives.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-363 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0002 ounces, 0.006 grams  Marking: T60 Unit: inch(mm) Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG N-Ch LIMIT P-Ch LIMIT 20 -20 +8 +8 1 -0.7 4 -2.8 350 2.8 -55~150 RθJA 357 UNITS V V A A mW mW/ oC oC oC/W August 16,2013-REV.00 Page 1 PPJT7600 N-Channel Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fa...