MOSFET
GDSSF2300
DESCRIPTION
The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope...
Description
GDSSF2300
DESCRIPTION
The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
● VDS = 20V,ID = 2.4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 55mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
D G
S
Schematic diagram
Application
●Battery protection ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2300
SSF2300
SOT-23
Ø180mm
SOT-23 top view
Marking and pin Assignment
Tape width 8 mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID (25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID (70℃)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
20 ±8
2.4 1. 7 10
0.9
-55 To 150
Unit
V V A
A
A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Gate-Body Leakage Current ON CHARACTERISTICS (Note 3)
IGSS VGS=±8V,VDS=0V
Gate Threshold Voltage
VGS(th)
...
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