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GDSSF2300

GOOD-ARK

MOSFET

GDSSF2300 DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope...


GOOD-ARK

GDSSF2300

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Description
GDSSF2300 DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 55mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Application ●Battery protection ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2300 SSF2300 SOT-23 Ø180mm SOT-23 top view Marking and pin Assignment Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID (25℃) Drain Current-Continuous@ Current-Pulsed (Note 1) ID (70℃) Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 20 ±8 2.4 1. 7 10 0.9 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) IGSS VGS=±8V,VDS=0V Gate Threshold Voltage VGS(th) ...




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