MOSFET
DESCRIPTION
The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation w...
Description
DESCRIPTION
The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.
GDSSF2418EBK
GENERAL FEATURES
● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating:2000V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
●Battery protection ●Load switch ●Power management
Schematic diagram Marking and pin Assignment
SOT23-6 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2418E
SSF2418EBK
SOT23-6
Ø330mm
Tape width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±12
6 30 1.3 -55 To 150
Unit
V V A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
95 ℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2418EBK
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
VGS=0V ID=250μA VDS=20V,VGS=0V
Gate-Bo...
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