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GDSSF2300B

GOOD-ARK

MOSFET

GDSSF2300B DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and o...


GOOD-ARK

GDSSF2300B

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Description
GDSSF2300B DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management D G S Schematic diagram Marking and pin Assignment SOT23-3 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2300B SSF2300B SOT23-3 Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 4.5 16 1.2 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 140 ℃/W Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2300B ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max 20 Unit V Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3...




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