MOSFET
GDSSF2300B
DESCRIPTION
The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and o...
Description
GDSSF2300B
DESCRIPTION
The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
● VDS = 20V,ID = 4.5A RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
●Battery protection ●Load switch ●Power management
D G
S Schematic diagram
Marking and pin Assignment
SOT23-3 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2300B
SSF2300B
SOT23-3
Ø180mm
Tape width 8 mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±10 4.5 16 1.2 -55 To 150
Unit
V V A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
140 ℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2300B
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max
20
Unit
V
Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3...
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