MUN5136DW1, NSBA115EDXV6
Dual PNP Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW
PNP Transistors with Monolithic Bi...
MUN5136DW1, NSBA115EDXV6
Dual
PNP Bias Resistor
Transistors R1 = 100 kW, R2 = 100 kW
PNP Transistors with Monolithic Bias Resistor Network
This series of digital
transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5136DW1T1G
SOT−363
3,000 /...