Resistor Transistors. NSBC144WDXV6 Datasheet


NSBC144WDXV6 Transistors. Datasheet pdf. Equivalent


NSBC144WDXV6


Dual NPN Bias Resistor Transistors
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6

Dual NPN Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW

NPN Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features
 Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant

MAXIMUM RATINGS (TA = 25C, common for Q1 and Q2, unless otherwise noted)

Rating

Symbol

Max

Unit

Collector-Base Voltage

VCBO

50

Vdc

Collector-Emitter Voltage

VCEO

50

Vdc

Collector Current − Continuous IC 100 mAdc

Input Forward Voltage

VIN(fwd)

40

Vdc

Input Reverse Voltage

VIN(rev)

10

Vdc

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extende...



NSBC144WDXV6
MUN5237DW1,
NSBC144WDXV6,
NSBC144WDP6
Dual NPN Bias Resistor
Transistors
R1 = 47 kW, R2 = 22 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
MUN5237DW1T1G,
SMUN5237DW1T1G
SOT363
3,000/Tape & Reel
NSBC144WDXV6T1G
SOT563
4,000/Tape & Reel
NSBC144WDP6T5G
SOT963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT363
CASE 419B
6
7P M G
G
1
SOT563
CASE 463A
7P M G
G
1
SOT963
CASE 527AD
VMG
1G
7P/V
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1
Publication Order Number:
DTC144WD/D

NSBC144WDXV6
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5237DW1 (SOT363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5237DW1 (SOT363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBC144WDXV6 (SOT563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBC144WDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBC144WDP6 (SOT963) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
NSBC144WDP6 (SOT963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
55 to +150
357
2.9
350
500
4.0
250
55 to +150
231
269
1.9
2.2
540
464
339
408
2.7
3.3
369
306
55 to +150
Unit
mW
mW/C
C/W
mW
mW/C
C/W
C/W
C
mW
mW/C
C/W
mW
mW/C
C/W
C
MW
mW/C
C/W
MW
mW/C
C/W
C
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2




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