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NSBC144WDXV6T1G Dataheets PDF



Part Number NSBC144WDXV6T1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual NPN Bias Resistor Transistors
Datasheet NSBC144WDXV6T1G DatasheetNSBC144WDXV6T1G Datasheet (PDF)

MUN5237DW1, NSBC144WDXV6, NSBC144WDP6 Dual NPN Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integra.

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MUN5237DW1, NSBC144WDXV6, NSBC144WDP6 Dual NPN Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features  Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable  These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C, common for Q1 and Q2, unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package Shipping† MUN5237DW1T1G, SMUN5237DW1T1G SOT−363 3,000/Tape & Reel NSBC144WDXV6T1G SOT−563 4,000/Tape & Reel NSBC144WDP6T5G SOT−963 8,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com PIN CONNECTIONS (3) (2) (1) R1 Q1 R2 R1 (4) (5) R2 Q2 (6) MARKING DIAGRAMS SOT−363 CASE 419B 6 7P M G G 1 SOT−563 CASE 463A 7P M G G 1 SOT−963 CASE 527AD VMG 1G 7P/V M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.  Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 0 1 Publication Order Number: DTC144WD/D MUN5237DW1, NSBC144WDXV6, NSBC144WDP6 THERMAL CHARACTERISTICS Characteristic Symbol MUN5237DW1 (SOT−363) ONE JUNCTION HEATED Total Device Dissipation TA = 25C Derate above 25C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA MUN5237DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25C Derate above 25C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL Junction and Storage Temperature Range NSBC144WDXV6 (SOT−563) ONE JUNCTION H.


SMUN5237DW1T1G NSBC144WDXV6T1G NSBC144WDP6T5G


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