Document
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
Dual NPN Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW
NPN Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5237DW1T1G, SMUN5237DW1T1G
SOT−363
3,000/Tape & Reel
NSBC144WDXV6T1G
SOT−563
4,000/Tape & Reel
NSBC144WDP6T5G
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com PIN CONNECTIONS
(3) (2) (1)
R1 Q1
R2 R1 (4) (5)
R2 Q2 (6)
MARKING DIAGRAMS
SOT−363 CASE 419B
6
7P M G G
1
SOT−563 CASE 463A
7P M G G
1
SOT−963 CASE 527AD
VMG 1G
7P/V M
G
= Specific Device Code = Date Code* = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number: DTC144WD/D
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5237DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation TA = 25C Derate above 25C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
MUN5237DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation TA = 25C Derate above 25C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
Thermal Resistance, Junction to Lead
(Note 1) (Note 2)
RqJL
Junction and Storage Temperature Range NSBC144WDXV6 (SOT−563) ONE JUNCTION H.