MCR265-10

MCR265−4 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters 550 Amperes Surge Capability Blocking Voltage to 800 Volts Device Marking: Logo, Device Type, e.g., MCR265−4, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage(1) (TJ = 25 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR265−4 MCR265−6 MCR265−8 MCR265−10 VDRM, VRRM 200 400 600 800 Unit Volts On-State RMS Current (180° Conduction Angles; TC = 70°C) Average On-State Current (180° Conduction Angles; TC = 70°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 70°C) Forward Peak Gate Power (Pulse Width ≤ 1.0 μs, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 70°C) Operating Junction Temperature Range IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ 55 Amps 35 Amps 550 Amps 20 Watts 0.5 Watt 2.0 Amps −40 to +125 °C Storage Temperature Range Tstg −40 to °C +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative pote...