IXGN120N60A3D1

GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 Ultra-low Vsat PT IGBTs for up to 5kHz switching Symbol VCES VCGR VGES VGEM IC25 IC110 I F110 I CM SSOA (RBSOA) PC TJ T JM T stg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms IXGN120N60A3D1 VGE= 15V, TVJ = 125°C, RG = 1.5Ω Clamped Inductive Load TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque (M4) 60A3 E 60A3D1 Maximum Ratings 600 V 600 V ±20 V ±30 V 200 A 120 A 36 A 800 A ICM = 200 @ VCES < 600 595 A V W -55 ... +150 150 -55 ... +150 2500 3000 °C °C °C V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 500μA, VCE = VGE ICES VCE = VCES, VGE = 0V, Note 3 TJ = 125°C 120N60A3 120N60A3D1 120N60A3 120N60A3D1 IGES VCE(sat) VCE = 0V, VGE = ±20V IC = 100A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 3.0 5.0 V 50 μA 650 μA 1 mA 5 mA ±400 nA 1.20 1.35 V VCES = IC110 = VCE(sat) ≤ 600V 120A 1.35V SOT-227B, miniBLOC E153432 E G E C G = Gate, C = Collector, E = Emitter Either Emitter Terminal can be used as Main or Kelvin Emitter Features Optimized for Low Conduction Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package miniBLOC UL Recognized Aluminium Nitride Isolation Isolation Voltage 3000 V~ Low VCE(sat) for Minimum On-State Advantages High Power De...