IXTY1N80P

Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID25 = ≤RDS(on) 800V 1A 14Ω TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight G S (TAB) GD S (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 TO-252 TO-251 (TO-220) Maximum Ratings 800 800 V V ±20 V ±30 V 1A 2A 1A 75 mJ 5 42 -55 ... +150 150 -55 ... +150 300 260 1.13 / 10 2.50 3.00 0.35 0.40 V/ns W °C °C °C °C °C Nm/lb.in. g g g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 50μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 800 V 2.0 4.0 V ±100 nA 3 μA 30 μA 10 14 Ω G D S (TAB) TO-252 (IXTY) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International Standard Packages z Fast Intrinsic Rectifier z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z Switched-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and ...