IXTV22N50P

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXTV) IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLUS220SMD (IXTV_S) VDSS = 500V ID25 = 22A ≤RDS(on) 270mΩ trr(typ) = 400ns TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight G DS D (TAB) G S D (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings 500 500 ± 30 ± 40 V V V V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 22 50 22 750 10 350 -55 ... +150 A A A mJ V/ns W °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Torque (TO-247 & TO-3P) 1.13/10 Nm/lb.in. Mounting Force (PLUS220) 11..65/2.5..14.6 N/lb. PLUS220 types TO-3P TO-247 4.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.5 V ± 100 nA 5 μA 50 μA 270 mΩ © 2009 IXYS CORPORATION, All Rights Reserved G D S TO-247 (IXTH) D (TAB) D (TAB) G = Gate D = Drain S = Source TAB = Drain Features z International Standard Packages z Avalanche Rated z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to M...