Main Product Characteristics
VDSS
55V
RDS(on) 7.2mohm(typ.)
ID 110A
Features and Benefits
Advanced Process Techno...
Main Product Characteristics
VDSS
55V
RDS(on) 7.2mohm(typ.)
ID 110A
Features and Benefits
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
TO - 220
SSPL5508
55V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect
transistors are produced using our proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS@ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range
Max. 110 83 440 200 1.3 55 ± 20 576 62 -55 to +175
Units
A
W W/°C
V V mJ A °C
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Rev.1.1
SSPL5508
55V N-Channel MOSFET
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient...