Main Product Characteristics
VDSS
60V
RDS(on) 34mΩ (typ.)
ID 38A Features and Benefits
TO-220
Advanced Process T...
Main Product Characteristics
VDSS
60V
RDS(on) 34mΩ (typ.)
ID 38A Features and Benefits
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Lead free product
SSPL6040
60V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect
transistors are produced using proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.67mH Avalanche Current @ L=0.67mH Operating Junction and Storage Temperature Range
Max. 38 27 152 71 0.48 60 ± 20 127 19.5
-55 to + 175
Units
A
W W/°C
V V mJ A °C
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Rev.1.0
SSPL6040
60V N-Channel MOSFET
Thermal Resistance
Symbol RθJC RθJA
Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④
Ty...