Main Product Characteristics:
VDSS
200V
RDS(on) 0.13ohm(typ.)
ID 18A ①
Features and Benefits:
Advanced Process Te...
Main Product Characteristics:
VDSS
200V
RDS(on) 0.13ohm(typ.)
ID 18A ①
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
TO220
SSPL2015
Marking and pin Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect
transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=4.2mH Avalanche Current @ L=4.2mH Operating Junction and Storage Temperature Range
Max. 18 ① 13 ①
72 150 1.0 200 ± 30 412 14 -55 to +175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2012.09.04 www.silikron.com
Version : 1.1
page 1 of 8
SSPL2015
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ...