Main Product Characteristics
VDSS RDS(on)
200V 0.13Ω(typ.)
ID 18A ①
Features and Benefits
TO-252
Advanced Proces...
Main Product Characteristics
VDSS RDS(on)
200V 0.13Ω(typ.)
ID 18A ①
Features and Benefits
TO-252
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
SSPL2015D
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect
transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=1.58mH Avalanche Current @ L=1.58mH Operating Junction and Storage Temperature Range
Max. 18 ① 13 ①
72 150 1.0 200 ± 30 348 21 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.11.16 www.silikron.com
Version : 1.1
page 1 of 8
SSPL2015D
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB m...