Document
Main Product Characteristics:
VDSS RDS(on)
60V 34mΩ (typ.)
ID 38A
TO-220
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSPL6040
Marking and pin Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.67mH Avalanche Current @ L=0.67mH Operating Junction and Storage Temperature Range
Max. 38 27 152 71 0.48 60 ±20 127 19.5
-55 to + 175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2012.06.05 www.silikron.com
Version : 1.0
page 1 of 8
SSPL6040
Thermal Resistance
Symbol RθJC RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
60 — —
2 — — — — — — — — — — — — — — —
Typ. — 34 61 — 2.5 — — — — 14.7 4.5 5.6 9.9 6.3 14.7 3.9 593 156 32.5
Max. — 40 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V mΩ V μA nA nC
ns
pF
Max. 2.1 62
Units ℃/W ℃/W
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 17A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 60V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 17A, VDS=48V, VGS = 10V
VGS=10V, VDD=30V, RL=1.75Ω, RGEN=13Ω ID=17A
VGS = 0V VDS = 25V ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 38
— — 152
— 0.88 1.3 — 25.1 — — 32.2 —
Units A
A V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=17A, VGS=0V, TJ = 25°C TJ = 25°C, IF =17A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2012.06.05 www.silikron.com
Versio.