N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics:
VDSS RDS(on)
ID
75V 9.5mΩ(typ.)
75A
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
TO220
SSPL7510
Marking and pin Assignmen...