SSS1206H

                                 Main Product Characteristics VDSS 120V RDS(on) 4.7mΩ (typ.) ID 180A ① Features and Benefits TO-247  „ Advanced Process Technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSS1206H  Marking and pin Assignment      Schematic diagram    Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.    Absolute max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Max. 180 ① 130 ① 670 375 2.5 120 ± 20 1148 87.5 -55 to +175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2012.11.21 www.silikron.com  Version : 1.0 page 1 of 8                                  SSS1206H  Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s...