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SSF4004 Dataheets PDF



Part Number SSF4004
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description MOSFET
Datasheet SSF4004 DatasheetSSF4004 Datasheet (PDF)

SSF4004 Feathers:  Advanced trench process technology  Special designed for Convertors and power controls  High density cell design for ultra low Rdson  Fully characterized Avalanche voltage and current  Avalanche Energy 100% test ID=200A BV=40V Rdson=4 mΩ(max.) Description: The SSF4004 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF4004 is .

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SSF4004 Feathers:  Advanced trench process technology  Special designed for Convertors and power controls  High density cell design for ultra low Rdson  Fully characterized Avalanche voltage and current  Avalanche Energy 100% test ID=200A BV=40V Rdson=4 mΩ(max.) Description: The SSF4004 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF4004 is assembled in high reliability and qualified assembly house. Application:  Power switching application  Commercial-industrial application SSF4004 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor VGS Gate-to-Source voltage dv/dt Peak diode recovery voltage EAS Single pulse avalanche energy ② EAR Repetitive avalanche energy TJ TSTG Operating Junction and Storage Temperature Range Max. 200 140 800 238 2.0 ±20 31 520 TBD –55 to +175 Units A W W/ Cْ V v/ns mJ ْC Thermal Resistance Parameter RθJC Junction-to-case RθJA Junction-to-ambient Min. Typ. Max. — 0.63 — — — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. BVDSS RDS(on) VGS(th) IDSS Drain-to-Source breakdown voltage 40 — Static Drain-to-Source on-resistance — 3.5 Gate threshold voltage 2.0 — Drain-to-Source leakage current —— —— Gate-to-Source forward leakage —— IGSS Gate-to-Source reverse leakage —— ©Silikron Semiconductor Corporation 2009.7.10 Max. — 4 4.0 2 10 100 -100 Units Test Conditions V VGS=0V,ID=250μA mΩ VGS=10V,ID=30A V VDS=VGS,ID=250μA VDS=40V,VGS=0V uA VDS=40V,VGS=0V,TJ=150ْC nA VGS=20V VGS=-20V Version: 1.1 page 1of5 SSF4004 Qg Total gate charge — 90 — ID=30A Qgs Gate-to-Source charge — 14 — nC VDD=30V Qgd Gate-to-Drain("Miller") charge — 24 — VGS=10V td(on) Turn-on delay time — 18.2 — VDD=30V tr td(off) Rise time Turn-Off delay time — 15.6 — — 70.5 — nS ID=2A ,RL=15Ω RG=2.5Ω tf Fall time — 13.8 — VGS=10V Ciss Input capacitance — 3150 — VGS=0V Coss Output capacitance — 300 — pF VDS=25V Crss Reverse transfer capacitance — 240 — f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current. — (Body Diode) Pulsed Source Current ISM (Body Diode) ① .— — 200 — 800 MOSFET symbol showing the A integral reverse p-n junction diode. VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge — — 1.3 V TJ=25ْC,IS=30A,VGS=0V ③ - 57 — nS TJ=25ْC,IF=57A - 107 — μC di/dt=100A/μs ③ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 57A, VDD = 20V ③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C EAS test circuits: BVdss RG L Gate charge test circuit: V dd Vgs RL VDD 1mA RG ©Silikron Semiconductor Corporation 2009.7.10 Version: 1.1 page 2of5 Switch Time Test Circuit: SSF4004 Switch Waveforms: Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature ©Silikron Semiconductor Corporation 2009.7.10 Version: 1.1 page 3of5 SSF4004 Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve ©Silikron Semiconductor Corporation 2009.7.10 Version: 1.1 page 4of5 TO220 MECHANICAL DATA: SSF4004 ©Silikron Semiconductor Corporation 2009.7.10 Version: 1.1 page 5of5 .


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