Document
SSF4004
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test
ID=200A
BV=40V Rdson=4 mΩ(max.)
Description: The SSF4004 is a new generation of high voltage and low
current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF4004 is assembled in high reliability and qualified assembly house.
Application: Power switching application Commercial-industrial application
SSF4004 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC ID@Tc=100ْC
IDM PD@TC=25ْC
Continuous drain current,VGS@10V Continuous drain current,VGS@10V
Pulsed drain current ① Power dissipation
Linear derating factor
VGS Gate-to-Source voltage
dv/dt
Peak diode recovery voltage
EAS Single pulse avalanche energy ②
EAR Repetitive avalanche energy
TJ TSTG
Operating Junction and Storage Temperature Range
Max. 200 140 800 238 2.0 ±20 31 520 TBD
–55 to +175
Units
A
W W/ Cْ
V v/ns mJ
ْC
Thermal Resistance
Parameter
RθJC
Junction-to-case
RθJA Junction-to-ambient
Min. Typ. Max. — 0.63 — — — 62
Units ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BVDSS RDS(on) VGS(th)
IDSS
Drain-to-Source breakdown voltage 40 —
Static Drain-to-Source on-resistance — 3.5
Gate threshold voltage
2.0 —
Drain-to-Source leakage current
—— ——
Gate-to-Source forward leakage
——
IGSS
Gate-to-Source reverse leakage
——
©Silikron Semiconductor Corporation
2009.7.10
Max. —
4 4.0 2 10 100 -100
Units
Test Conditions
V VGS=0V,ID=250μA mΩ VGS=10V,ID=30A V VDS=VGS,ID=250μA
VDS=40V,VGS=0V uA VDS=40V,VGS=0V,TJ=150ْC
nA VGS=20V VGS=-20V
Version: 1.1
page 1of5
SSF4004
Qg
Total gate charge
— 90
—
ID=30A
Qgs
Gate-to-Source charge
— 14
— nC
VDD=30V
Qgd
Gate-to-Drain("Miller") charge
— 24
—
VGS=10V
td(on)
Turn-on delay time
— 18.2 —
VDD=30V
tr td(off)
Rise time Turn-Off delay time
— 15.6 — — 70.5 — nS
ID=2A ,RL=15Ω RG=2.5Ω
tf
Fall time
— 13.8 —
VGS=10V
Ciss
Input capacitance
— 3150 —
VGS=0V
Coss
Output capacitance
— 300 — pF
VDS=25V
Crss
Reverse transfer capacitance
— 240 —
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current. — (Body Diode)
Pulsed Source Current ISM (Body Diode) ①
.—
— 200 — 800
MOSFET symbol showing the A integral reverse p-n junction diode.
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
— — 1.3 V TJ=25ْC,IS=30A,VGS=0V ③ - 57 — nS TJ=25ْC,IF=57A - 107 — μC di/dt=100A/μs ③
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 57A, VDD = 20V ③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C
EAS test circuits:
BVdss
RG
L
Gate charge test circuit:
V dd Vgs
RL
VDD 1mA RG
©Silikron Semiconductor Corporation
2009.7.10
Version: 1.1
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Switch Time Test Circuit:
SSF4004
Switch Waveforms:
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
©Silikron Semiconductor Corporation
2009.7.10
Version: 1.1
page 3of5
SSF4004
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2009.7.10
Version: 1.1
page 4of5
TO220 MECHANICAL DATA:
SSF4004
©Silikron Semiconductor Corporation
2009.7.10
Version: 1.1
page 5of5
.