SSF3960J7-HF

SSF3960J7-HF                                                                                                      Main Product Characteristics: VDSS 30V RDS(on) 1.9mΩ (typ.) ID 130A Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature PPAK5*6-8L        Schematic diagram  Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy ② Avalanche Current @ L=0.3mH② Operating Junction and Storage Temperature Range Max. 130 100 327 90 30 ± 20 152 55 -55 to + 150 Units A W V V mJ A °C ©Silikron Semiconductor CO., LTD. 2014.10.14 www.silikron.com  Version: 1.0 page 1 of 7 SSF3960J7-HF                                                                                                          Thermal Resistance ...