MOSFET
Main Product Characteristics:
VDSS
30V
RDS(on) 2.6mΩ (typ.)
ID 120A
Features and B...
Description
Main Product Characteristics:
VDSS
30V
RDS(on) 2.6mΩ (typ.)
ID 120A
Features and Benefits:
TO263
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF3904A
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAR TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH② Avalanche Current @ L=0.1mH② Operating Junction and Storage Temperature Range
Max. 120 90 480 100 0.55 30 ± 20 320 80 -55 to + 175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO., LTD.
2014.03.01 www.silikron.com
Version: 1.0
page 1 of 8
SSF3904A
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ ...
Similar Datasheet
- SSF3904A MOSFET - Silikron Semiconductor