MOSFET
SSF3639C
DESCRIPTION
The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate char...
Description
SSF3639C
DESCRIPTION
The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES
●N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V
●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V
●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package
N-channel P-channel Schematic diagram
Marking and pin Assignment
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
3639C
SSF3639C
SOP-8
Ø330mm
Tape width 12mm
Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25℃ TA=70℃
ID
Pulsed Drain Current (Note 1)
IDM
Maximum Power Dissipation
TA=25℃ TA=70℃
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
N-Channel 30 ±20 6.3
20 1.6
-55 To 150
P-Channel -30 ±20 -5
-20 2.0
-55 To 150
Unit V V
A
A
W
℃
THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2)
N-Ch
62.5
RθJA
P-Ch
℃/W 62.5
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
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v1.1
SSF3639C
Drain-Source Breakdown Voltage BVDSS
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