MOSFET
SSF3637
DESCRIPTION
The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has b...
Description
SSF3637
DESCRIPTION
The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
GENERAL FEATURES
●VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
D1 G1
G2
D2
S1 S2
Schematic diagram
Marking and pin Assignment
Application
●Battery protection ●Load switch ●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3637
SSF3637
SOP-8
Ø330mm
Tape width 12mm
Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30 ±20 -5 -20 2.0 -55 To 150
Unit
V V A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
Min Typ Max Unit
-30 V
-1 μA
±100
nA
©Silikron Semiconductor CO....
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