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SSF3036C Dataheets PDF



Part Number SSF3036C
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description MOSFET
Datasheet SSF3036C DatasheetSSF3036C Datasheet (PDF)

Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3036C DFN 3x2-8L Bottom View N-Channel Mosfet P-Channel Mosfet Schematic diagram Description: It utilizes the latest trench processing techniques.

  SSF3036C   SSF3036C



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Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3036C DFN 3x2-8L Bottom View N-Channel Mosfet P-Channel Mosfet Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25°C IDM VGS PD @TC = 25°C TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current ② Gate to source voltage Power Dissipation ③ Operating Junction and Storage Temperature Range Max. N-Channel P-Channel 4 ① -3.6 ① 16 -14.4 ±12 ±12 2.1 1.3 -55 to + 150 -55 to + 150 Units A V W °C Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 5s) ④ Typ. — N-channel 60 Max. P-Channel 95 Units ℃/W ©Silikron Semiconductor CO.,LTD. 2012.02.02 www.silikron.com Version : 1.0 page 1 of 6 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage N-channel P-Channel N-channel P-Channel N-channel P-Channel N-channel P-Channel N-channel N-channel P-Channel P-Channel Min. 30 -30 — — 0.5 -0.5 — — — -100 — -100 Typ. — — 32.4 61.6 — — — — — — — — SSF3036C Max. — — 36 65 2 -2 1 -1 100 — 100 — Units V mΩ V μA nA Conditions VGS = 0V, ID = 250μA VGS = 0V, ID = -250μA VGS= 4.5V,ID = 4.8A VGS= -4.5V,ID = -2.3A VDS = VGS, ID = 250μA VDS = VGS, ID = -250μA VDS =30V,VGS = 0V VDS =-30V,VGS = 0V VGS =12V VGS = -12V VGS =12V VGS =-12V Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage N-channel P-Channel N-channel P-Channel N-channel P-Channel Min. — — — — — — Typ. — — — — 0.82 -0.85 Max. 4 -3.6 16 -14.4 1.2 -1.2 Units A A Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.4A, VGS=0V V IS=-1.5A, VGS=0V ©Silikron Semiconductor CO.,LTD. 2012.02.02 www.silikron.com Version : 1.0 page 2 of 6 Test circuits and Waveforms: SSF3036C Switching time waveform: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C Thermal characteristics Figure1. Normalized Thermal Transient Impedance, Junction-to-Ambient ©Silikron Semiconductor CO.,LTD. 2012.02.02 www.silikron.com Version : 1.0 page 3 of 6 Mechanical Data: DFN 3X2_8L PACKAGE OUTLINE DIMENSION SSF3036C Symbol A A1 A3 D E b L e Dimension In Millimeters Min Nom Max 0.700 0.750 0.800 0.000 - 0.050 0.200REF 2.950 3.000 3.050 1.950 2.000 2.050 0.250 0.300 0.350 0.280 0.350 0.420 0.650BSC Min 0.028 0.000 0.116 0.077 0.010 0.016 Dimension In Inches Nom 0.030 0.008REF 0.118 0.079 0.012 0.014 0.026BSC Max 0.031 0.002 0.120 0.081 0.014 0.017 ©Silikron Semiconductor CO.,LTD. 2012.02.02 www.silikron.com Version : 1.0 page 4 of 6 Ordering and Marking Information Device Marking: 3036C Package (Available) DFN 3x2-8L Operating Temperature Range C : -55 to 150 ºC SSF3036C Devices per Unit Package Units/T Tubes/Inner Type ube Box DFN 3x2-8L 3000pcs 10pcs Units/Inner Box 30000pcs Inner Boxes/Carton Box 4pcs Units/Carton Box 120000pcs Reliability Test Program Test Item Conditions High Tj=125℃ to 150℃ @ Temperature 80% of Max Reverse VDSS/VCES/VR Bias(HTRB) High Tj=150℃ @ 100% of Temperature Max VGSS Gate Bias(HTGB) Duration 168 hours 500 hours 1000 hours Sample Size 3 lots x 77 devices 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2012.02.02 www.silikron.com Version : 1.0 page 5 of 6 SSF3036C ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron ass.


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