Document
Main Product Characteristics:
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 32.4mohm 61.6mohm
ID 4A -3.6A
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF3036C
DFN 3x2-8L Bottom View
N-Channel Mosfet P-Channel Mosfet
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C IDM VGS PD @TC = 25°C TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current ② Gate to source voltage Power Dissipation ③ Operating Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
4 ① -3.6 ①
16 -14.4
±12 ±12
2.1 1.3
-55 to + 150 -55 to + 150
Units
A V W °C
Thermal Resistance
Symbol RθJA
Characterizes Junction-to-ambient (t ≤ 5s) ④
Typ. —
N-channel 60
Max.
P-Channel 95
Units ℃/W
©Silikron Semiconductor CO.,LTD.
2012.02.02 www.silikron.com
Version : 1.0
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Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS RDS(on) VGS(th) IDSS
IGSS
Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current
Gate-to-Source forward leakage
N-channel P-Channel N-channel P-Channel N-channel P-Channel N-channel P-Channel N-channel N-channel P-Channel P-Channel
Min. 30 -30 — — 0.5 -0.5 — — — -100 — -100
Typ. — —
32.4
61.6 — — — — — — — —
SSF3036C
Max. — — 36 65 2 -2 1 -1 100 — 100 —
Units V mΩ V μA
nA
Conditions VGS = 0V, ID = 250μA VGS = 0V, ID = -250μA VGS= 4.5V,ID = 4.8A VGS= -4.5V,ID = -2.3A VDS = VGS, ID = 250μA VDS = VGS, ID = -250μA VDS =30V,VGS = 0V VDS =-30V,VGS = 0V VGS =12V VGS = -12V VGS =12V VGS =-12V
Source-Drain Ratings and Characteristics
Symbol IS ISM VSD
Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage
N-channel P-Channel N-channel P-Channel N-channel P-Channel
Min. — — — — — —
Typ. — — — — 0.82
-0.85
Max. 4
-3.6 16 -14.4 1.2 -1.2
Units A
A
Conditions MOSFET symbol showing the integral reverse p-n junction diode.
IS=2.4A, VGS=0V V
IS=-1.5A, VGS=0V
©Silikron Semiconductor CO.,LTD.
2012.02.02 www.silikron.com
Version : 1.0
page 2 of 6
Test circuits and Waveforms:
SSF3036C
Switching time waveform:
Notes:
①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
Thermal characteristics
Figure1. Normalized Thermal Transient Impedance, Junction-to-Ambient
©Silikron Semiconductor CO.,LTD.
2012.02.02 www.silikron.com
Version : 1.0
page 3 of 6
Mechanical Data:
DFN 3X2_8L PACKAGE OUTLINE DIMENSION
SSF3036C
Symbol
A A1 A3 D E b L e
Dimension In Millimeters
Min Nom Max
0.700
0.750
0.800
0.000
- 0.050
0.200REF
2.950
3.000
3.050
1.950
2.000
2.050
0.250
0.300
0.350
0.280
0.350
0.420
0.650BSC
Min 0.028 0.000
0.116 0.077 0.010 0.016
Dimension In Inches
Nom 0.030
0.008REF
0.118 0.079 0.012 0.014 0.026BSC
Max 0.031 0.002
0.120 0.081 0.014 0.017
©Silikron Semiconductor CO.,LTD.
2012.02.02 www.silikron.com
Version : 1.0
page 4 of 6
Ordering and Marking Information
Device Marking: 3036C
Package (Available) DFN 3x2-8L
Operating Temperature Range C : -55 to 150 ºC
SSF3036C
Devices per Unit
Package Units/T Tubes/Inner
Type
ube Box
DFN 3x2-8L 3000pcs
10pcs
Units/Inner Box
30000pcs
Inner Boxes/Carton Box
4pcs
Units/Carton Box
120000pcs
Reliability Test Program
Test Item Conditions
High
Tj=125℃ to 150℃ @
Temperature 80% of Max
Reverse
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ @ 100% of
Temperature Max VGSS Gate
Bias(HTGB)
Duration
168 hours 500 hours 1000 hours
Sample Size
3 lots x 77 devices
168 hours 500 hours 1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2012.02.02 www.silikron.com
Version : 1.0
page 5 of 6
SSF3036C
ATTENTION:
■ Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications.
■ Silikron ass.