MOSFET
SSF3617
DESCRIPTION
The SSF3617 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This ...
Description
SSF3617
DESCRIPTION
The SSF3617 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS =-30V,ID =-10A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V
● High Power and current handling capability ● Lead free product is acquired ● Surface Mount Package
D G
S Schematic diagram
Marking and pin Assignment
Application
●PWM applications ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3617
SSF3617
SOP-8
Ø330mm
SOP-8 top view
Tape width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30 ±25 -10 -8 -80 3.1 -55 To 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
75 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-30V,VGS=0V
Min Typ Max Unit
-30 V -1 μA
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v1.0
SSF3617
Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Ga...
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