SSF3605S

Main Product Characteristics: VDSS RDS(on) -30V 5.1mΩ(typ.) ID -15A SOP-8 Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3605S D G S Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH Avalanche Current @ L=0.1mH Operating Junction and Storage Temperature Range Max. -15 -12.8 -120 3.1 -30 ±25 180 60 -55 to +150 Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ Typ. — Max. 40 Units A W V V mJ A °C Units ℃/W ©Silikron Semiconductor CO.,LTD. 2012.04.09 www.silikron.com Version : 1.2(preliminary) page 1 of 7 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDS...