SSF3341

Main Product Characteristics: VDSS RDS(on) ID -30V 42mΩ (typ.) -4.2A ① SOT-23 Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3341 D G Marking and pin Assignment S Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: @TA=25℃ unless otherwise specified Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -4.2 ① -3.5 ① -30 1.4 -30 ±12 -55 to +150 Units A W V V °C Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ ©Silikron Semiconductor CO.,LTD. 2013.03.06 www.silikron.com Typ. — Max. 90 Units °C /W Version : 2.2 page 1 of 8 SSF3341 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Sou...