SSF3420

DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package SSF3420 30V N-Channel MOSFET D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOT23-6 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 3420 SSF3420 SOT23-6 Ø180mm Tape Width 8mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) VGS ID（25℃） ID（70℃） IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 6.3 4.8 20 1.6 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 78 ℃/W www.goodark.com Page 1 of 6 Rev.2.0 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA SSF3420 30V N-Channel MOSFET Min Typ Max Unit 30 V Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-St...