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SSF3606 Dataheets PDF



Part Number SSF3606
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSF3606 DatasheetSSF3606 Datasheet (PDF)

DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =15A RDS(ON) < 8.5mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package SSF3606 30V N-Channel MOSFET D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management .

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DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =15A RDS(ON) < 8.5mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package SSF3606 30V N-Channel MOSFET D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3606 SSF3606 SOP-8 Ø330mm SOP-8 Top View Tape Width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG Limit 30 ±20 15 12.5 60 2 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max Unit 30 V www.goodark.com Page 1 of 6 Rev.1.0 SSF3606 30V N-Channel MOSFET Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IG SS VGS(th) RDS(O N) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Trr Qrr VSD VDS=30V,VGS=0V VGS=±20V,VDS=0V VDS=VGS,ID=250μA VGS=4.5V, ID=11.5A VGS=10V, ID=15A VDS=5V,ID=11A 1 ±100 1.3 1.7 6.4 4.8 25 2.5 8.5 6 VDS=15V,VGS=0V, F=1.0MHz 3100 550 300 VDS=15V,VGS=10V,RGEN=6Ω ID=1A VDS=15V,ID=15A,VGS=10V IF=15A, dI/dt=100A/µs 19 11 60 25 50 8 15 20 5 VGS=0V,IS=2.8A 0.75 1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. μA nA V mΩ mΩ S PF PF PF nS nS nS nS nC nC nC nS nC V www.goodark.com Page 2 of 6 Rev.1.0 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS SSF3606 30V N-Channel MOSFET Vdd Rl Vin D Vout Vgs Rgen G S td(on) VOUT VIN 10% ton tr td(off) toff tf 90% INVERTED 10% 90% 10% 50% 90% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms ID- Drain Current (A) TJ-Junction Temperature(℃) Figure 3 Power Dissipation TJ-Junction Temperature(℃) Figure 4 Drain Current PD Power(W) Rdson On-Resistance(mΩ) ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS ID- Drain Current (A) Figure 6 Drain-Source On-Resistance www.goodark.com Page 3 of 6 Rev.1.0 ID- Drain Current (A) SSF3606 30V N-Channel MOSFET Normalized On-Resistance Vgs Gate-Source Voltage (V) Figure 7 Transfer Characteristics TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Qg Gate Charge (nC) Figure 11 Gate Charge www.goodark.com Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Page 4 of 6 Rev.1.0 ID- Drain Current (A) SSF3606 30V N-Channel MOSFET Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance www.goodark.com Page 5 of 6 Rev.1.0 SOP-8 PACKAGE INFORMATION SSF3606 30V N-Channel MOSFET NOTES: 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 6 of 6 Rev.1.0 .


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