Document
DESCRIPTION
The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = 30V,ID =15A RDS(ON) < 8.5mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=10V
● High Power and current handing capability ● Lead free product ● Surface Mount Package
SSF3606
30V N-Channel MOSFET
D G
S Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3606
SSF3606
SOP-8
Ø330mm
SOP-8 Top View
Tape Width 12mm
Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(25℃) ID(70℃)
IDM
Maximum Power Dissipation Operating Junction and Storage Temperature Range
PD TJ,TSTG
Limit
30 ±20 15 12.5 60
2 -55 To 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
30 V
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Page 1 of 6
Rev.1.0
SSF3606
30V N-Channel MOSFET
Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3)
IDSS IG SS
VGS(th)
RDS(O N)
gFS
Clss Coss Crss
td(on) tr
td(off) tf Qg
Qgs Qgd Trr Qrr
VSD
VDS=30V,VGS=0V VGS=±20V,VDS=0V
VDS=VGS,ID=250μA VGS=4.5V, ID=11.5A
VGS=10V, ID=15A VDS=5V,ID=11A
1 ±100
1.3 1.7 6.4 4.8 25
2.5 8.5 6
VDS=15V,VGS=0V, F=1.0MHz
3100 550 300
VDS=15V,VGS=10V,RGEN=6Ω ID=1A
VDS=15V,ID=15A,VGS=10V
IF=15A, dI/dt=100A/µs
19 11 60 25 50 8 15 20 5
VGS=0V,IS=2.8A
0.75 1.2
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
μA nA
V mΩ mΩ S
PF PF PF
nS nS nS nS nC nC nC nS nC
V
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Page 2 of 6
Rev.1.0
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
SSF3606
30V N-Channel MOSFET
Vdd
Rl Vin
D Vout
Vgs Rgen
G
S
td(on)
VOUT
VIN
10%
ton tr
td(off)
toff tf
90%
INVERTED
10%
90% 10%
50%
90% 50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
ID- Drain Current (A)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
TJ-Junction Temperature(℃)
Figure 4 Drain Current
PD Power(W)
Rdson On-Resistance(mΩ)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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Page 3 of 6
Rev.1.0
ID- Drain Current (A)
SSF3606
30V N-Channel MOSFET
Normalized On-Resistance
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Page 4 of 6
Rev.1.0
ID- Drain Current (A)
SSF3606
30V N-Channel MOSFET
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
r(t),Normalized Effective Transient Thermal Impedance
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Page 5 of 6
Rev.1.0
SOP-8 PACKAGE INFORMATION
SSF3606
30V N-Channel MOSFET
NOTES:
1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 6
Rev.1.0
.