Document
SSF3605S
30V P-Channel MOSFET
DESCRIPTION
The SSF3605S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
D
G
S Schematic Diagram
GENERAL FEATURES
● VDS =-30V,ID =-15A
RDS(ON) < 7.4mΩ @ VGS=-10V RDS(ON) < 7.0mΩ @ VGS=-20V ● High Power and current handing capability ● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3605S
SSF3605S
SOP-8
-
SOP-8 Top View
Tape Width -
Quantity -
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(25℃) ID(70℃)
IDM
Maximum Power Dissipation Operating Junction and Storage Temperature Range
PD TJ,TSTG
Limit
-30 ±25 -15 -12.8 -80
3 -55 To 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40 ℃/W
www.goodark.com
Page 1 of 4
Rev.1.0
SSF3605S
30V P-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
Zero Gate Voltage Drain Current
IDSS VDS=-30V,VGS=0V
Gate-Body Leakage Current ON CHARACTERISTICS (Note 3)
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage Drain-Source On-State Resistance
Forward Transconductance DYNAMIC CHARACTERISTICS (Note4)
VGS(th) RDS(O N)
gFS
VDS=VGS,ID=-250μA VGS=-10V, ID=-20A VGS=-20V, ID=-20A VDS=-5V,ID=-20A
-1.4 -1.9 6.3 5.1
35
Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4)
Clss Coss Crss
VDS=-15V,VGS=0V, F=1.0MHz
4300 1000 750
Turn-on Delay Time
td(on)
20
Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge
tr td(off)
tf Qg Qgs
VDS=-15V,VGS=-10V,RGEN=3Ω ID=1A
VDS=-15V,ID=-15A,VGS=-10V
30 50 35 95 20
Gate-Drain Charge
Qgd
30
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS
Trr Qrr
IF=-15A, dI/dt=100A/µs
40 30
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=-1A
-0.72
Max
-1 ±100 -2.7 7.4
7
-1
Unit
V μA nA
V mΩ mΩ S
PF PF PF
nS nS nS nS nC nC nC nS nC
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com
Page 2 of 4
Rev.1.0
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
SSF3605S
30V P-Channel MOSFET
td(on)
VOUT
VIN
10%
ton tr
td(off)
toff tf
90%
INVERTED
10%
90% 10%
50%
90% 50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
ZthJA Normalized Transient Thermal Resistance
Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance
www.goodark.com
Page 3 of 4
Rev.1.0
SOP-8 PACKAGE INFORMATION
SSF3605S
30V P-Channel MOSFET
NOTES:
1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
www.goodark.com
Page 4 of 4
Rev.1.0
.