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SSF3605S Dataheets PDF



Part Number SSF3605S
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description P-Channel MOSFET
Datasheet SSF3605S DatasheetSSF3605S Datasheet (PDF)

SSF3605S 30V P-Channel MOSFET DESCRIPTION The SSF3605S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. D G S Schematic Diagram GENERAL FEATURES ● VDS =-30V,ID =-15A RDS(ON) < 7.4mΩ @ VGS=-10V RDS(ON) < 7.0mΩ @ VGS=-20V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power man.

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SSF3605S 30V P-Channel MOSFET DESCRIPTION The SSF3605S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. D G S Schematic Diagram GENERAL FEATURES ● VDS =-30V,ID =-15A RDS(ON) < 7.4mΩ @ VGS=-10V RDS(ON) < 7.0mΩ @ VGS=-20V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3605S SSF3605S SOP-8 - SOP-8 Top View Tape Width - Quantity - ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG Limit -30 ±25 -15 -12.8 -80 3 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W www.goodark.com Page 1 of 4 Rev.1.0 SSF3605S 30V P-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) IGSS VGS=±20V,VDS=0V Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) VGS(th) RDS(O N) gFS VDS=VGS,ID=-250μA VGS=-10V, ID=-20A VGS=-20V, ID=-20A VDS=-5V,ID=-20A -1.4 -1.9 6.3 5.1 35 Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Clss Coss Crss VDS=-15V,VGS=0V, F=1.0MHz 4300 1000 750 Turn-on Delay Time td(on) 20 Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge tr td(off) tf Qg Qgs VDS=-15V,VGS=-10V,RGEN=3Ω ID=1A VDS=-15V,ID=-15A,VGS=-10V 30 50 35 95 20 Gate-Drain Charge Qgd 30 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Trr Qrr IF=-15A, dI/dt=100A/µs 40 30 Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A -0.72 Max -1 ±100 -2.7 7.4 7 -1 Unit V μA nA V mΩ mΩ S PF PF PF nS nS nS nS nC nC nC nS nC V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS SSF3605S 30V P-Channel MOSFET td(on) VOUT VIN 10% ton tr td(off) toff tf 90% INVERTED 10% 90% 10% 50% 90% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms ZthJA Normalized Transient Thermal Resistance Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SOP-8 PACKAGE INFORMATION SSF3605S 30V P-Channel MOSFET NOTES: 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0 .


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