SSF3339

Main Product Characteristics VDSS RDS(on) ID -30V 37mΩ (typ.) -4.1A ① SOT-23 Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3339 30V P-Channel MOSFET D G Marking and Pin Assignment S Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: @TA=25℃ unless otherwise specified Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -4.1 ① -3.5 ① -20 1.4 -30 ± 20 -55 to +150 Units A W V V °C Thermal Resistance Symbol RθJA Characteristics Junction-to-ambient (t ≤ 10s) ④ www.goodark.com Page 1 of 7 Typ. — Max. 90 Units °C /W Rev.1.1 SSF3339 30V P-Channel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static ...