SSF3341L

SSF3341L 30V P-Channel MOSFET DESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 3341L SSF3341L SOT-23-3 Ø180mm SOT-23-3 Top View Tape Width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) VGS ID（25℃） ID（70℃） IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -30 ±12 -4.2 -3.5 -30 1 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current Gate-Body Leakage Current IDSS VDS=-24V,VGS=0V IGSS VGS=±12V,VDS=0V 90 ℃/W Min Typ Max Unit -30 V ...