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SSF3365 Dataheets PDF



Part Number SSF3365
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description P-Channel MOSFET
Datasheet SSF3365 DatasheetSSF3365 Datasheet (PDF)

SSF3365 30V P-Channel MOSFET DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package S Schematic Diagram 3365 Marking and Pin Assignment APPLI.

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SSF3365 30V P-Channel MOSFET DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package S Schematic Diagram 3365 Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 3365 SSF3365 SOT-23 Ø180mm SOT-23 Top View Tape Width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) VGS ID(25℃) ID(70℃) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -30 ±20 -3 -2.5 -12 1.25 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current Gate-Body Leakage Current IDSS VDS=-24V,VGS=0V IGSS VGS=±20V,VDS=0V 100 ℃/W Min Typ Max Unit -30 V -1 ±100 μA nA www.goodark.com Page 1 of 4 Rev.1.0 SSF3365 30V P-Channel MOSFET ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(O N) Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=VGS,ID=-250μA VGS=-10V, ID=-3A VGS=-4.5V, ID=-2.5A VDS=-10V,ID=-3A VDS=-15V,VGS=0V, F=1.0MHz VDD=-15V,ID=-1A VGS=-10V,RGEN=6Ω VDS=-15V,ID=-3A,VGS=-10V VGS=0V,IS=-1.25A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. -1 64 80 100 140 3 600 150 95 10 9 25 8 10 2 2 -1.2 V mΩ S PF PF PF nS nS nS nS nC nC nC V www.goodark.com Page 2 of 4 Rev.1.0 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS SSF3365 30V P-Channel MOSFET td(on) VOUT VIN 10% ton tr td(off) toff tf 90% INVERTED 10% 90% 10% 50% 90% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms ZthJA Normalized Transient Thermal Resistance Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance .


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