Document
SSF3365
30V P-Channel MOSFET
DESCRIPTION
The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
D G
GENERAL FEATURES
● VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V
● High Power and current handing capability ● Lead free product ● Surface Mount Package
S Schematic Diagram
3365
Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
3365
SSF3365
SOT-23
Ø180mm
SOT-23 Top View
Tape Width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1)
VGS ID(25℃) ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30 ±20 -3 -2.5 -12 1.25 -55 To 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current Gate-Body Leakage Current
IDSS VDS=-24V,VGS=0V IGSS VGS=±20V,VDS=0V
100 ℃/W
Min Typ Max Unit
-30 V
-1 ±100
μA nA
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Page 1 of 4
Rev.1.0
SSF3365
30V P-Channel MOSFET
ON CHARACTERISTICS (Note 3) Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(O N)
Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3)
gFS
Clss Coss Crss
td(on) tr
td(off) tf Qg
Qgs Qgd
VSD
VDS=VGS,ID=-250μA VGS=-10V, ID=-3A VGS=-4.5V, ID=-2.5A VDS=-10V,ID=-3A
VDS=-15V,VGS=0V, F=1.0MHz
VDD=-15V,ID=-1A VGS=-10V,RGEN=6Ω
VDS=-15V,ID=-3A,VGS=-10V
VGS=0V,IS=-1.25A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
-1 64 80 100 140
3
600 150 95
10 9 25 8 10 2 2
-1.2
V mΩ
S
PF PF PF
nS nS nS nS nC nC nC
V
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Page 2 of 4
Rev.1.0
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
SSF3365
30V P-Channel MOSFET
td(on)
VOUT
VIN
10%
ton tr
td(off)
toff tf
90%
INVERTED
10%
90% 10%
50%
90% 50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
ZthJA Normalized Transient Thermal Resistance
Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance
.