AP28G40GEH

Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free AP28G40GEH/J Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR G CE TO-252(H) VCE ICP G 400V 150A C G C E TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage ±6 ICP Pulsed Collector Current, VGE @ 2.5V 150 PD@TA=25℃ Maximum Power Dissipation 1.1 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 . E Units V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. IGES Gate-Emitter Leakage Current VGE=+ 6V, VCE=0V -- ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V -- VCE(sat) Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed) - 3.5 VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 0.3 - Qg Total Gate Charge IC=40A - 76 Qge Gate-Emitter Charge VCE=200V -4 Qgc Gate-Collector Charge VGE=4V - 26 td(on) Turn-on Delay Time VCC=320V - 220 tr Rise Time IC=160A - 800 td(off) Turn-off Delay Time RG=10Ω - 1.6 tf Fall Time VGE=4V - 1.5 Cies Input Capacitance VGE=0V - 4485 Coes Output Capacitance VCE=30V - 44 Cres Reverse Transfer Capacitance f=1.0MHz - 40 RthJC Thermal Resistance Junction-Case -- RthJA Thermal ...