AP28G40GEO

Advanced Power Electronics Corp. AP28G40GEO RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 400 ±6 150 1 -55 to 150 150 Units V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. IGES Gate-Emitter Leakage Current VGE=± 6V, VCE=0V -- ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V -- VCE(sat) Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed) - 5.2 VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 0.3 - Qg Total Gate Charge IC=40A - 76 Qge Gate-Emitter Charge VCE=200V -4 Qgc Gate-Collector Charge VGE=4V - 26 td(on) Turn-on Delay Time VCC=320V - 220 tr Rise Time IC=160A - 800 td(off) Turn-off Delay Time RG=10Ω - 1.6 tf Fall Time VGE=4V - 1.5 Cies Input Capacitance VGE=0V - 4485 Coes Output Capacitance VCE=30V - 44 Cres RthJA1 Reverse Transfer Capacitance f=1.0MHz Thermal Resistance Junction-Ambient - 40 -- Max. ±10 10 9 1.2 130 8240 125 Units uA uA V V nC nC nC ns ns µs µs pF pF pF ℃/W Notes: 1.Surface mounted ...