Advanced Power Electronics Corp.
AP30G100W
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features...
Advanced Power Electronics Corp.
AP30G100W
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR
TRANSISTOR
Features
▼ High speed switching ▼ Low Saturation Voltage
VCE(sat)=3.0V@IC=30A ▼ Industry Standard TO-3P Package ▼ RoHS Compliant
G C E
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL
Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
VCES IC
G
Rating 1000 ±30
60 30 120 208 -55 to 150 -55 to 150 300
1000V 30A
C
E
Units V V A A A W ℃ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value 0.6 40
Units ℃/W ℃/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVCES IGES ICES VCE(sat)
VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon
Collect-to-Emitter Breakdown Voltage Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage
Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss
VGE=0V, IC=250uA
VGE=±30V, VCE=0...