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AP30T10GP-HF Dataheets PDF



Part Number AP30T10GP-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP30T10GP-HF DatasheetAP30T10GP-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP30T10GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suit.

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Advanced Power Electronics Corp. AP30T10GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID G D S 100V 55mΩ 19A TO-220(P) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 100 +20 19 12 60 44.6 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 2.8 62 Units ℃/W ℃/W 1 201112132 AP30T10GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=12A VGS=5V, ID=8A VDS=VGS, ID=250uA VDS=10V, ID=12A VDS=80V, VGS=0V VGS= +20V, VDS=0V ID=12A VDS=80V VGS=4.5V VDS=50V ID=12A RG=1Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz 100 -- -V 55 mΩ - - 85 mΩ 0.9 - 2.5 V - 14 - S - - 25 uA - - +100 nA - 13.5 21.6 nC - 3 - nC - 9 - nC - 6.5 - ns - 18 - ns - 20 - ns - 5 - ns - 840 1340 pF - 115 - pF - 80 - pF - 1.6 - Ω Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time2 Reverse Recovery Charge Test Conditions IS=12A, VGS=0V IS=12A, VGS=0V dI/dt=100A/µs Min. Typ. Max. Units - - 1.3 V - 40 - ns - 70 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 IS(A) RDS(ON) (mΩ) ID , Drain Current (A) 50 T C = 25 o C 40 30 20 10V 7.0V 6.0V 5.0V V G = 4.0V 10 0 0246 V DS , Drain-to-Source Voltage (V) 8 Fig 1. Typical Output Characteristics 70 I D =8A T C =25 o C 60 50 40 2 4 6 8 10 V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 20 16 12 T j =150 o C T j =25 o C 8 4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode Normalized VGS(th) (V) Normalized RDS(ON) ID , Drain Current (A) AP30T10GP-HF 40 T C = 150 o C 30 20 10V 7.0V 6.0V 5.0V V G = 4.0V 10 0 0 4 8 12 16 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.4 I D =12A V G =10V 2.0 1.6 1.2 0.8 0.4 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I D =1mA 150 1.2 0.8 0.4 0 -50 0 50 100 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 3 VGS , Gate to Source Voltage (V) AP30T10GP-HF 10 I D = 12 A 8 V DS = 50 V V DS = 60 V 6 V DS = 80 V 4 2 0 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 1200 1000 C800 iss 600 400 200 C oss C rss 0 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics ID (A) 100 Operation in this area limited by RDS(ON) 10 100us 1 T c =25 o C Single Pulse 1ms 10ms 100ms DC 0.1 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) 1000 Fig 9. Maximum Safe Operating Area 1 Duty factor=0.5 Normalized Thermal Response (Rthjc) 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VDS 90% 10% VGS td(on) tr td(off) tf VG 4.5V QGS QG QGD Charge .


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