Document
Advanced Power Electronics Corp.
AP30T10GP-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.
BVDSS RDS(ON) ID
G D S
100V 55mΩ
19A
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating 100 +20 19 12 60 44.6 2
-55 to 150 -55 to 150
Units V V A A A W W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 2.8 62
Units ℃/W ℃/W
1 201112132
AP30T10GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=12A
VGS=5V, ID=8A
VDS=VGS, ID=250uA VDS=10V, ID=12A VDS=80V, VGS=0V VGS= +20V, VDS=0V ID=12A VDS=80V VGS=4.5V VDS=50V ID=12A RG=1Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz
100 --
-V 55 mΩ
- - 85 mΩ
0.9 - 2.5 V
- 14 -
S
- - 25 uA
- - +100 nA
- 13.5 21.6 nC
- 3 - nC
- 9 - nC
- 6.5 - ns
- 18 - ns
- 20 - ns
- 5 - ns
- 840 1340 pF
- 115 - pF
- 80 - pF
- 1.6 - Ω
Source-Drain Diode
Symbol VSD trr Qrr
Parameter Forward On Voltage2 Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions IS=12A, VGS=0V IS=12A, VGS=0V dI/dt=100A/µs
Min. Typ. Max. Units - - 1.3 V - 40 - ns - 70 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
IS(A)
RDS(ON) (mΩ)
ID , Drain Current (A)
50
T C = 25 o C
40
30
20
10V 7.0V 6.0V 5.0V
V G = 4.0V
10
0 0246
V DS , Drain-to-Source Voltage (V)
8
Fig 1. Typical Output Characteristics
70
I D =8A T C =25 o C
60
50
40 2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T j =150 o C
T j =25 o C
8
4
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
Normalized VGS(th) (V)
Normalized RDS(ON)
ID , Drain Current (A)
AP30T10GP-HF
40
T C = 150 o C
30
20
10V 7.0V 6.0V 5.0V
V G = 4.0V
10
0 0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =12A V G =10V
2.0
1.6
1.2
0.8
0.4 -50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.6
I D =1mA
150
1.2
0.8
0.4
0 -50 0 50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
150
3
VGS , Gate to Source Voltage (V)
AP30T10GP-HF
10
I D = 12 A
8
V DS = 50 V V DS = 60 V
6 V DS = 80 V
4
2
0 0 4 8 12 16 20 24
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
1200
1000
C800 iss
600
400
200
C oss C rss
0 1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
ID (A)
100
Operation in this area limited by RDS(ON)
10
100us
1
T c =25 o C Single Pulse
1ms 10ms 100ms DC
0.1 0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
1 Duty factor=0.5
Normalized Thermal Response (Rthjc)
0.2
0.1 0.1
0.05
0.02 0.01
Single Pulse
PDM
t
T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS 90%
10% VGS
td(on) tr
td(off) tf
VG
4.5V QGS
QG QGD
Charge
.