AP40G120W

Advanced Power Electronics Corp. Features ▼ Advanced IGBT Technology ▼ Low Saturation Voltage VCE(sat)=3.15V@IC=40A ▼ Industry Standard TO-3P Package G C E Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 10 seconds . Notes: 1.Pulse width limited by max. junction temperature . AP40G120W RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C VCES IC TO-3P G Rating 1200 +20 80 40 160 208 -55 to 150 -55 to 150 300 1200V 40A C E Units V V A A A W ℃ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Value 0.6 40 Units ℃/W ℃/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) Parameter Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Cres Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Condi...