SSF2627

SSF2627 DESCRIPTION The SSF2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). GENERAL FEATURES ●VDS = -20V,ID = -5.4A RDS(ON) < 48mΩ @ VGS=-2.5V RDS(ON) < 33mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management D G S Schematic diagram Marking and pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF2627 SSF2627 SOP-8 Ø330mm SOP-8 top view Tape width 8mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit -20 ±10 -5.4 -28 1.47 -55 To 150 85 Unit V V A A W ℃ ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V Min Typ Max Unit -20 V -1 μA ±100 nA ©Silikron Semiconductor CO.,LTD. 1 http:/...