SSF6014A

SSF6014A Feathers:  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current ID =60A BV=60V Rdson=14mΩ（max.） Description: The SSF6014A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6014A is assembled in high reliability and qualified assembly house. Application:  Power switching application Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① PD@TC=25ْC Power dissipation Linear derating factor VGS Gate-to-Source voltage EAS Single pulse avalanche energy ② EAR Repetitive avalanche energy TJ TSTG Operating Junction and Storage Temperature Range SSF6014A TOP View (D2PAK) Max. 60 42 240 115 0.74 ±20 235 TBD –55 to +175 Units A W W/ Cْ V mJ ْC Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min. — — Typ. 1.31 — Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source breakdown voltage 60 — — V RDS(on) Static Drain-to-Source on-resistance — 12 14 mΩ VGS(th) gfs Gate threshold voltage Forward transconductance 2.0 4.0 — 60 — —— 2 V S IDSS Drain-to-Source leakage current μA — — 10 Gate-to-Source forward leakage IGSS Gate-to-Source reverse leakage ©Silik...