SSF6007

Main Product Characteristics VDSS -50V RDS(on) 2.1ohm(typ.) ID -130mA Features and Benefits SOT-23  Advanced trench MOSFET process technology  Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF6007 50V P-Channel MOSFET 6007 Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance. These features combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS ESD TJ TSTG Parameter Continuous Drain Current, VGS @ -10V① Continuous Drain Current, VGS @ -10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage ESD Rating (HBM module) Operating Junction and Storage Temperature Range Thermal Resistance Max. -130 -100 -520 230 -50 ± 20 1 -55 to + 150 Symbol RθJA Characteristics Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ www.goodark.com Page 1 of 5 Typ. — — Max. 556 540 Units mA mW V V KV °C Units ℃/W ℃/W Rev.1.0 SSF6007 50V P-Channel MOSFET Electrical Charac...