SSF4015

Main Product Characteristics VDSS -40V RDS(on) 11mΩ (typ.) ID －20A TO-252 (D-PAK) Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  High Power and current handing capability  175℃ operating temperature  Lead free product SSF4015 40V P-Channel MOSFET SSSSSFF344600113525D D G S Marking and Pin Schematic Diagram Assignment Description: It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM ISM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Pulsed Source Current (Body Diode)② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH Single Pulse Avalanche Current @ L=0.1mH Operating Junction and Storage Temperature Range Max. -20 -16 -50 -50 75 -40 ± 20 40 28 -55 to + 175 Units A W V V mJ A °C www.goodark.com Page 1 of 5 Rev.1.1 SSF4015 40V P-Channel MOSFET Thermal Resistance Symbol RθJA RJC Characteristics Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Maximum Junct...