MOSFET
SSF4604
30V Complementary MOSFET
DESCRIPTION
The SSF4604 uses advanced trench technology MOSFET to provide excellent RD...
Description
SSF4604
30V Complementary MOSFET
DESCRIPTION
The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES
●N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 44mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V
●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V
●High Power and current handing capability ●Lead free product ●Surface Mount Package
N-channel P-channel Schematic Diagram
D1 D1 D2 D2 8 7 65
4604
1 2 34 S1 G1 S2 G2
Marking and Pin Assignment
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
4604
SSF4604
SOP-8
Ø330mm
Tape Width 12mm
Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25℃ TA=70℃
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25℃ TA=70℃
Operating Junction and Storage Temperature Range
VDS VGS ID IDM PD TJ,TSTG
N-Channel 30 ±20 6.9 6.0 30 2.0 1.35
-55 To 150
P-Channel -30 ±20 -5 -4.0 -20 2.0 1.44
-55 To 150
Unit V V
A
A
W ℃
THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2)
N-Ch
62.5
RθJA
P-Ch
℃/W 62.5
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
www.goodark.com
Page 1 of 4
Rev.1.0
SSF4604
30V Comple...
Similar Datasheet