Document
DESCRIPTION
The SSF4624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = 40V,ID =6A RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 31mΩ @ VGS=10V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
SSF4624
40V Dual N-Channel MOSFET
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF4624
SSF4624
SOP-8
Ø330mm
SOP-8 Top View
Tape Width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1)
VGS ID(25℃) ID(70℃)
IDM
Maximum Power Dissipation Operating Junction and Storage Temperature Range
PD TJ,TSTG
Limit
40 ±20
6 5 20 2 -55 To 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
VGS=0V ID=250μA VDS=32V,VGS=0V
Min Typ Max Unit
40 V 1 μA
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Page 1 of 4
Rev.1.0
Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3)
IG SS
VGS(th) RDS(O N)
gFS
Clss Coss Crss
td(on) tr
td(off) tf Qg
Qgs Qgd Trr Qrr
VSD
SSF4624
40V Dual N-Channel MOSFET
VGS=±20V,VDS=0V
±100
nA
VDS=VGS,ID=250μA VGS=10V, ID=6A VGS=4.5V, ID=5A VDS=5V,ID=6A
1 2.3 24 34
5
3 31 45
V mΩ mΩ S
VDS=20V,VGS=0V, F=1.0MHz
400 95 35
PF PF PF
VDS=20V,VGS=10V,RGEN=6Ω ID=6A
VDS=20V,ID=6A,VGS=10V
IF=6A, dI/dt=100A/µs
4 3 15 3 8 1.3 2.3 20 14
nS nS nS nS nC nC nC nS nC
VGS=0V,IS=1A
0.75 1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
SSF4624
40V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl Vin
D Vout
Vgs Rgen
G
S
td(on)
VOUT
VIN
10%
ton tr
td(off)
toff tf
90%
INVERTED
10%
90% 10%
50%
90% 50%
PULSE WIDTH
Figure 1: Switching Test Circuit
Figure 2:Switching Waveforms
ZthJA Normalized Transient Thermal Resistanc.