DatasheetsPDF.com

SSF4624 Dataheets PDF



Part Number SSF4624
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description Dual N-Channel MOSFET
Datasheet SSF4624 DatasheetSSF4624 Datasheet (PDF)

DESCRIPTION The SSF4624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 40V,ID =6A RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 31mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package SSF4624 40V Dual N-Channel MOSFET Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power ma.

  SSF4624   SSF4624



Document
DESCRIPTION The SSF4624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 40V,ID =6A RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 31mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package SSF4624 40V Dual N-Channel MOSFET Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF4624 SSF4624 SOP-8 Ø330mm SOP-8 Top View Tape Width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) VGS ID(25℃) ID(70℃) IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG Limit 40 ±20 6 5 20 2 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=32V,VGS=0V Min Typ Max Unit 40 V 1 μA www.goodark.com Page 1 of 4 Rev.1.0 Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IG SS VGS(th) RDS(O N) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Trr Qrr VSD SSF4624 40V Dual N-Channel MOSFET VGS=±20V,VDS=0V ±100 nA VDS=VGS,ID=250μA VGS=10V, ID=6A VGS=4.5V, ID=5A VDS=5V,ID=6A 1 2.3 24 34 5 3 31 45 V mΩ mΩ S VDS=20V,VGS=0V, F=1.0MHz 400 95 35 PF PF PF VDS=20V,VGS=10V,RGEN=6Ω ID=6A VDS=20V,ID=6A,VGS=10V IF=6A, dI/dt=100A/µs 4 3 15 3 8 1.3 2.3 20 14 nS nS nS nS nC nC nC nS nC VGS=0V,IS=1A 0.75 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 SSF4624 40V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl Vin D Vout Vgs Rgen G S td(on) VOUT VIN 10% ton tr td(off) toff tf 90% INVERTED 10% 90% 10% 50% 90% 50% PULSE WIDTH Figure 1: Switching Test Circuit Figure 2:Switching Waveforms ZthJA Normalized Transient Thermal Resistanc.


SSF2816EB SSF4624 SSF2816EBK


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)