SSF2810EH2

Main Product Characteristics: VDSS RDS(on) ID 20V 10mΩ (typ.) 8A① Features and Benefits: TSSOP-8  Advanced MOSFET process technology  Ultra low on-resistance with low gate charge  High Power and current handing capability  150℃ operating temperature  G/S ESD protect 2KV (HBM) SSF2810EH2 Marking and pin Assignment Schematic diagram Description: The SSF2810EH2 series MOSFETs is a new technology, which combines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ Max. 8① 6.2 ① 25 2 0.5 20 ± 10 -55 to +150 Typ. — Max. 90 Units A W W/°C V V °C Units ℃/W ©Silikron Semiconductor CO., LTD. 2013.09.20 www.silikron.com Version: 1.0 page 1 of 7 SSF2810EH2 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forw...