SSF5508U

                                 Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.) ID 110A Features and Benefits: TO220  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSF5508U    Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH② Avalanche Current @ L=0.3mH② Operating Junction and Storage Temperature Range Max. 110 80 440 187 2.0 55 ± 20 375 50 -55 to + 175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2011.06.01 www.silikron.com  Version : 1.0 page 1 of 8                                  SSF5508U  Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-am...