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SSF5506 Dataheets PDF



Part Number SSF5506
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description MOSFET
Datasheet SSF5506 DatasheetSSF5506 Datasheet (PDF)

                                 Main Product Characteristics: VDSS 55V RDS(on) ID 3.8mΩ(typ.) 140A Features and Benefits: TO-220  „ Advanced MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSF5506  Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest processing techniques to a.

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                                 Main Product Characteristics: VDSS 55V RDS(on) ID 3.8mΩ(typ.) 140A Features and Benefits: TO-220  „ Advanced MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSF5506  Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH② Avalanche Current @ L=0.3mH② Operating Junction and Storage Temperature Range Max. 140 100 520 220 1.5 55 ± 20 735 70 -55 to + 175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.08.13 www.silikron.com  Version : 1.1 page 1 of 8                                  SSF5506  Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 0.68 62 40 Units ℃/W ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 55 — — 2 — — — —  —  — — — — — — — — — — Typ. — 3.8 6.4 — 2.2 — — —  —  150 35 61 20 82 48 19 6206 672 538 Max. — 5 — 4 — 1 50 100 -100 — — — — — — — — — — Units V mΩ V μA nA nC ns pF Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 75A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 55V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 101A, VDS=44V, VGS = 10V VGS=10V, ID = 60A VDS=38V, RG=1.1Ω VGS = 0V VDS = 25V ƒ = 900KHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 140 — — 520 — 0.93 1.3 — 43 — — 79 — Units A A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode.   IS=75A, VGS=0V TJ = 25°C, IF =90A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2013.08.13 www.silikron.com  Version : 1.1 page 2 of 8                                  Test circuits and Waveforms EAS Test Circuit: Gate charge test circuit: SSF5506  Switching Time Test Circuit: Switching Waveforms: Notes:  ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2013.08.13 www.silikron.com  Version : 1.1 page 3 of 8                                  SSF5506  Typical electrical and thermal characteristics                                     Figure 1: Typical Output Characteristics                                         Figure 3. Drain-to-Source Breakdown Voltage vs.   Temperature       Figure 2. Gate to source cut‐off voltage Figure 4: Normalized On-Resistance Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. 2013.08.13 www.silikron.com  Version : 1.1 page 4 of 8                                  Typical electrical and thermal characteristics  SSF5506              Figure 5. Maximum Drain Current Vs. Case   Temperature           Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage                         Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case     ©Silikron Semiconductor CO.,LTD. 2013.08.13 www.silikron.com  Version : 1.1 page 5 of 8                                  Mechanical Data: TO220 PACKAGE OUTLINE DIMENSION SSF5506  Symbol A A1 A2 b b2 c D D1 DEP E E1 ФP1 e e1 H1 L L1 L2 ФP Q Q1 ϴ1 ϴ2 Dimension In Millimeters Min 4.400 1.270 2.590 0.770 1.230 0.480 15.100 9.000 0.050 10.060 - Nom 4.550 1.300 2.690 0.500 15.400 9.100 0.285 10.160 8.700 Max 4.700 1.330 2.790 0.900 1.360 0.520 15.700 9.200.


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