Document
Main Product Characteristics:
VDSS
55V
RDS(on) ID
3.8mΩ(typ.) 140A
Features and Benefits:
TO-220
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF5506
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VDS VGS EAS IAR TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH② Avalanche Current @ L=0.3mH② Operating Junction and Storage Temperature Range
Max. 140 100 520 220 1.5 55 ± 20 735 70 -55 to + 175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.08.13 www.silikron.com
Version : 1.1
page 1 of 8
SSF5506
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 0.68 62 40
Units ℃/W ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min. 55 — — 2 — — —
— —
— — — — — — — — — —
Typ. — 3.8 6.4 — 2.2 — —
— —
150 35 61 20 82 48 19 6206 672 538
Max. — 5 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V mΩ V μA nA nC
ns
pF
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 75A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 55V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 101A, VDS=44V, VGS = 10V
VGS=10V, ID = 60A VDS=38V, RG=1.1Ω
VGS = 0V VDS = 25V ƒ = 900KHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 140
— — 520
— 0.93 1.3 — 43 — — 79 —
Units A
A V ns nC
Conditions
MOSFET symbol
showing the
integral reverse p-n junction diode.
IS=75A, VGS=0V
TJ = 25°C, IF =90A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.08.13 www.silikron.com
Version : 1.1
page 2 of 8
Test circuits and Waveforms
EAS Test Circuit:
Gate charge test circuit:
SSF5506
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.08.13 www.silikron.com
Version : 1.1
page 3 of 8
SSF5506
Typical electrical and thermal characteristics
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
Figure 2. Gate to source cut‐off voltage
Figure 4: Normalized On-Resistance Vs. Case Temperature
©Silikron Semiconductor CO.,LTD.
2013.08.13 www.silikron.com
Version : 1.1
page 4 of 8
Typical electrical and thermal characteristics
SSF5506
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.08.13 www.silikron.com
Version : 1.1
page 5 of 8
Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION
SSF5506
Symbol
A A1 A2 b b2 c D D1 DEP E E1
ФP1 e e1
H1
L
L1
L2
ФP
Q
Q1
ϴ1
ϴ2
Dimension In Millimeters
Min
4.400 1.270 2.590 0.770 1.230 0.480 15.100 9.000 0.050 10.060
-
Nom
4.550 1.300 2.690
0.500 15.400 9.100 0.285 10.160 8.700
Max
4.700 1.330 2.790 0.900 1.360 0.520 15.700 9.200.